Regensburg 2022 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 2: Focus Session: Innovative GaN-based High-power Devices: Growth, Characterization, Simulation, Application 1

DS 2.2: Hauptvortrag

Montag, 5. September 2022, 10:00–10:30, H17

Energy-efficient power electronics based on Gallium Nitride — •Oliver Ambacher — Sustainable Systems Engineering (INATECH), Albert-Ludwigs-Universität, Freiburg

Around 40% of the energy converted worldwide by technical systems is already provided in the form of electricity. This share is expected to increase to around 60% in 2040. These enormous amounts of energy not only have to be generated in a way that conserves resources and the environment, but also distributed and used efficiently. The power electronics required for this is an *emerging field* of electrical engineering, which makes it possible to provide electrical energy optimally adapted for a wide variety of applications. These applications include the integration of renewable energy sources into the electrical supply network, drive technology for electromobility, the power supply for data centers or the high-frequency network for mobile communications. Using the example of the development and use of particularly energy-efficient gallium nitride-based power electronic circuits, the presentation will illustrate the high potential for saving energy that further optimization of semiconductor materials and microelectronic components offers and how sustainable electronic systems can be realized from them. Based on a basic understanding of the *atomic building blocks*, functional material properties are derived and presented for the design of novel power electronic devices and components. These GaN-based components are demonstrated for high performance amplifiers and voltage converters that are characterized by particularly energy-efficient operation.