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Regensburg 2022 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) 3

DS 9.3: Talk

Tuesday, September 6, 2022, 10:00–10:15, H14

Structural analysis of ScxAl1-xN thin films — •Rebecca Petrich1, Younes Slimi1, Hauke Honig2, Lorenz Steinacker2, Katja Tonisch1, Raphael Kuhnen3, Dietmar Frühauf3, and Stefan Krischok11TU Ilmenau, FG Technische Physik I, IMN MacroNano, 98693 Ilmenau — 2TU Ilmenau, FG Werkstoffe der Elektrotechnik, IMN MacroNano, 98693 Ilmenau — 3Endress+Hauser SE+Co. KG, TTD Technologieentwicklung, 79689 Maulburg

The further and new development of functional materials is an important and constant research approach for the optimization of microelectromechanical systems. In the field of piezoelectric materials, AlN stands out due to its good piezoelectric properties and its CMOS compatibility, its very good thermal stability and high sound velocity. While the basic research for this material is considered to be largely completed, research for the scandium-based alloy ScxAl1-xN is still in its infancy. The need for investigation is particularly high for alloys with scandium concentrations of more than x = 15%. For this purpose, ScxAl1-xN thin films were deposited and analyzed using pulsed magnetron sputtering in a concentration range between x = 15% and 35%. Starting with the crystal orientation (X-ray diffractometry) and the layer composition (energy-dispersive X-ray spectroscopy) through to the surface roughness (atomic force microscopy), optical parameters for determining the layer thickness and dielectric function (spectroscopic UV-Vis ellipsometry) were also examined and compared to pure AlN. In addition, the homogeneity of the layer properties was examined over different radii on 4" Si wafers.

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