Regensburg 2022 – wissenschaftliches Programm

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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 16: Oxide Semiconductors (joint session HL/KFM)

KFM 16.10: Vortrag

Mittwoch, 7. September 2022, 12:00–12:15, H33

Conduction channels in polycrystalline copper iodede thin films — •Tillmann Stralka — Universtität Leipzig, Felix Bloch Institute for Solid State Physics, Linnéstr. 5, 04103 Leipzig, Germany

The search for high-performance, transparent p-type conductive materials has been a major challenge for decades [1]. Copper iodide (CuI) or alloys based on CuI [2] could offer a solution, since CuI does outperform all other known p-type TCMs, concerning transmittance in the visible spectrum as well as electrical conductivity at room temperature [3]. In this contribution polycrystalline CuI thin films, grown by sputtering, are investigated. Hereby we try to understand and differentiate the contribution of grains and grain boundaries (GBs) to electrical transport. Extended structural defects such as GBs lead to a depletion of majority charge carriers in their vicinity and even a localised inversion (two dimensional electron gas) within GBs was reported [4]. To acquire morphological (grain and GBs) and electrical properties with a high spatial resolution we employ current probe atomic force microscopy and Kelvin probe force microscopy. We evaluate these measurements with a novel approach that offers the possibility to correlate topographic and electrical properties over a whole series of scans in dependence on an externally applied voltage [5], measuring temperature, probe force, plasma treatment and degradation over time.

[1] M. Grundmann et al., J.Phys.D.Apps.Phys., 49(213001), 2016 [2] T. Jun et al., Adv. Mater., 30(1706573), 2018 [3] C. Yang et al., PNAS 113(412929), 2016 [4] M. Kneiß et al., Adv. Mater. Interfaces, 5(6), 2018 [5] I. Visoly-Fisher et al., Adv. Funct. Mater., 16(649), 2016

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