Regensburg 2022 – wissenschaftliches Programm
KFM 20.9: Vortrag
Mittwoch, 7. September 2022, 17:30–17:45, H34
Phonon Signatures for Polaron Formation in an Anharmonic Semiconductor — •Feifan Wang1,2, Weibin Chu3, Jin Zhao3, and X.-Y. Zhu1 — 1Columbia University, New York, NY, 10027 USA — 2Dept. of Materials, ETH Zurich, Switzerland — 3University of Science and Technology of China, Hefei, Anhui 230026, China
Polaron formation, in which charge carriers are dressed by a cloud of lattice distortions, is partially responsible for the long carrier lifetimes and diffusion lengths in the lead halide perovskite (LHP), a superior optoelectronic material. Considerations of ferroelectric-like phonon anharmonicities of this system lead to the recent proposal of ferroelectric large polarons, which attributes efficient charge-carrier screening to the extended ordering of dipoles associated with inversion-symmetry-breaking unit cells. Here, we study electron-phonon coupling in Bi2O2Se, a semiconductor which bears resemblance to LHPs in ionic bonding, band transport with long carrier diffusion lengths, and dynamical phonon disorder as revealed by low-frequency Raman spectroscopy. Using coherent phonon spectroscopy, we show the strong coupling of an anharmonic phonon mode to photo-excited charge carriers, while the Raman excitation of this mode is symmetry-forbidden in the ground-state. Density functional theory calculations verify that the phonon mode originates from the symmetry reduction after charge injection and indicate the local dipole ordering induced by photo-excited electrons. This study provides an initial attempt to generalize the proposed charge-carrier screening model to account for the outstanding optoelectronic properties of defect-tolerant semiconductors.