Regensburg 2022 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 35: Poster 2
MA 35.46: Poster
Donnerstag, 8. September 2022, 16:00–18:00, P4
Voltage induced magneto-ionic interactions controlling magnetic properties of synthetic antiferromagnets — •Maria-Andromachi Syskaki1,2, Takaaki Dohi2, R. Pachat3, J. W. van der Jagt4,5, M. Bhukta2, Jürgen Langer1, D. Ravelosona3,4, L. Herrera Diez3, Gerhard Jakob2, and Mathias Kläui2 — 1Singulus Technologies AG, 63796 Kahl am Main, Germany — 2Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudingerweg 7, 55128 Mainz, Germany — 3Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 91120 Palaiseau, France — 4Spin-Ion technologies, C2N, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France — 5Université Paris-Saclay, 3 rue Joliot-Curie, 91190 Gif-sur-Yvette, France
Voltage control of magnetic properties in spintronic devices is one of the most promising device-compatible and energy-efficient ways for future storage applications [1]. This approach can be ideally realized with the advantages of a synthetic antiferromagnet (SAF) system, which provides higher thermal stability and a wide dynamic range, e.g. high domain wall velocities for nearly compensated SAFs [2] when integrated into MRAM devices. In our work, we have grown a SAF stack by magnetron sputtering consisting of two ferromagnetic layers coupled by a non-magnetic spacer layer. A thermodynamically stable skyrmion state at elevated temperatures is achievable in this stack [3]. With room temperature voltage-controlled magneto-ionic effects, we focus on the modulation of the magnetic properties in this system, i.e., the voltage control of the compensation ratio between the layers, the perpendicular magnetic anisotropy, and the antiferromagnetic RKKY coupling strength. [1] T. Nozaki et al., Micromachines 10(5), 327 (2019). [2] Y. Guan et al., Nat. Commun. 12, 5002 (2021). [3] T. Dohi, et al., Nat. Commun 10, 5153 (2019).