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Regensburg 2022 – scientific programme

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O: Fachverband Oberflächenphysik

O 81: 2D Materials 4: Heterostructures

O 81.2: Talk

Friday, September 9, 2022, 10:45–11:00, S052

Electronic Structure of Quasi-Freestanding WS2/MoS2 HeterostructuresBorna Pielić1, Dino Novko1, Iva Šrut Rakić1, Jiaqi Cai2, Marin Petrović1, Alice Bremerich2, Robin Ohmann2, Nataša Vujičić1, Mario Basletić3, Marko Kralj1, and •Carsten Busse21Institute of Physics, Zagreb, Croatia — 2Universität Siegen, Germany — 3University of Zagreb, Croatia

Quasi-freestanding heterostructures of semiconductiong two-dimensional materials with sharp interfaces, large built-in electric field, and narrow depletion region widths are proper candidates for the future design of electronic and optoelectronic devices.

Here, we epitaxially grow lateral WS2-MoS2 and vertical WS2/MoS2 heterostructures on graphene under UHV conditions. By means of scanning tunneling spectroscopy (STS), we examine the electronic structure of monolayer MoS2, WS2, and WS2/MoS2 vertical heterostructure. Moreover, we investigate band bending in the vicinity of the narrow one-dimensional interface of the WS2-MoS2 lateral heterostructure. Density functional theory (DFT) is used for the calculation of the band structures, as well as for the density of states maps at the interfaces. For the WS2-MoS2 lateral heterostructure, we find type-II band alignment and determine the corresponding depletion regions, charge densities, and the electric field at the interface.

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