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SKM 2023 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Focus Session: Progress in Hybrid Phononic Quantum Technologies II

HL 10.8: Talk

Monday, March 27, 2023, 17:45–18:00, POT 151

Strongly Stressed 3C-SiC Nanostring Resonators With High Quality Factors — •Philipp Bredol1, Yannick Klaß1, Felix David1, Eva Weig1, Nagesh S. Japtap2,3, Manfred Helm2,3, Georgy Astakhov2, and Artur Erbe2,31Technical University of Munich, Chair of Nano and Quantum Sensors, 85748 Munich, Germany — 2Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — 3Dresden University of Technology, 01062 Dresden, Germany

Strongly stressed SiC nanostring resonators are a promising platform for sensing applications. SiC is mechanically, chemically, and thermally robust and process compatible with many Si technologies. Mechanical quality factors in the 105 range are achieved at room temperature with devices of ≈ 70×1 µm2 footprint.

Because the mechanical quality factor often determines sensitivity and resolution of nanomechanical sensors, the understanding of mechanical loss mechanisms is important for possible applications. In this contribution we show how to separate intrinsic material losses and dissipation dilution effects by analyzing mechanical response spectra. We apply these methods to analyze how He+ irradiation damage affects the mechanical properties of SiC nanostring resonators (see contribution of Nagesh S. Jagtap).

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