SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Functional semiconductors for renewable energy solutions I
HL 38.3: Vortrag
Donnerstag, 30. März 2023, 10:00–10:15, POT 6
Calibration of low temperature photoluminescence of boron doped silicon with increased temperature precision — •Katharina Peh1, Aaron Flötotto1, Kevin Lauer1, 2, Dirk Schulze1, and Stefan Krischok1 — 1TU Ilmenau, Institut für Physik und Institut für Mikro- und Nanotechnologien, 98693 Ilmenau, Germany — 2CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
Low-temperature photoluminescence spectroscopy (LTPL) enables the determination of the dopant concentration of shallow impurities in silicon. We present a method which allows the determination of the boron concentration in silicon in a range from 1011 cm−3 to 1017 cm−3 at temperatures from 4.2 to 20 K with increased temperature accuracy. This method requires only one calibration function for the photoluminescence intensity ratio IBTO(BE)/IITO(FE). We obtain the measurement temperature from the intrinsic silicon photoluminescence line of free excitons (ITO(FE)) using a fitting method, which distinguish the TO and LO components of the free exciton peak. The determined calibration function is
IBTO(BE)/IITO(FE)=(5.8± 0.08)· 10−18 cm3· cboron· e(56.7± 0.7K)/T. The obtained exciton binding energy to boron, Eb=4.9± 0.1 meV, agrees well with literature
data.