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HL: Fachverband Halbleiterphysik

HL 47: Oxide Semiconductors II

HL 47.4: Vortrag

Freitag, 31. März 2023, 10:15–10:30, POT 81

Analysis of thickness distributions for combinatorial pulsed laser deposition — •Clemens Petersen, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig Felix-Bloch-Institut, Leipzig, Deutschland

Recently combinatorial deposition methods have increasingly gained scientists* attention, due to the high experimental throughput and resource-wise efficiency they offer in materials discovery. This enables fast screening of material properties of multinary material systems using just a single sample. By employing pulsed laser deposition with our segmented target approach [1] we successfully realized the deposition of α-(Al_xGa_1−x)₂O₃ with continuous composition spread over the whole composition range on a single 2-inch sapphire wafer [2]. Accompanied by the usage of high-throughput measurements such as spectroscopic ellipsometry and x-ray diffraction, the characterization of the material systems’ physical properties with high chemical resolution and comparably low efforts becomes feasible. By employing the plasma plume expansion model suggested by Anisimov et al. [3] and the resulting spatial material-deposition distribution we calculate binary growth rates as function of position enabling us to predict film thickness and composition locally. Thereby the deposition of group III sesquioxides can be described exceptionally well. We further show that the binary distributions can be used to predict the combinatorial deposition of ternary alloys with high precision. [1] H. von Wenckstern et al., pss(b), Vol. 257, 1900626 [2] A. Hassa et al., pss(b), Vol. 258, 2000394 [3] S. I. Anisimov et al., Phys. rev. B, Vol 48, 12076.