SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 5: Heterostructures, interfaces and surfaces
HL 5.5: Talk
Monday, March 27, 2023, 11:00–11:15, POT 112
Evolution of vacancy like defects in heavily doped GaAs — •Maciej Oskar Liedke1, Slawomir Prucnal2, Maik Butterling1, Juanmei Duan2, Eric Hirschmann1, Mao Wang2, Manfred Helm2, Shengqiang Zhou2, and Andreas Wagner1 — 1Institute for Radiation Physics, Helmholtz-Zentrum Dresden - Rossendorf, Dresden, Germany — 2Institute for Ion Beam Physics, Helmholtz-Zentrum Dresden - Rossendorf, Dresden, Germany
The effect of intense pulsed laser melting and flash lamp annealing on defects distribution and activation efficiency in chalcogenide-implanted GaAs was investigated by means of positron annihilation spectroscopy and transport measurements. Using positrons as a sensitive probe of open volumes and dedicated DFT calculations, we will highlight the capability of nanosecond pulsed laser melting to control the type and density of defect complexes, e.g. S or Te substituting As atoms associated to Ga vacancy, playing a crucial role for donor deactivation. The distribution of defects and carriers will be discussed regarding the depth distribution of implanted elements and the solidification velocity during recrystallization.