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MM: Fachverband Metall- und Materialphysik

MM 23: Poster II

MM 23.14: Poster

Tuesday, March 28, 2023, 18:15–20:00, P2/OG1+2

Investigation of the MoS2 crystallization process in thin films — •Annika Korn, Thomas Brede, and Cynthia A. Volkert — Institut für Materialphysik, Göttingen, Germany

Crystalline transition metal dichalcogenide thin films show interesting potential in various application areas (e.g. optoelectronics and data storage). Crystallization of amorphous sputtered thin films is one way to produce large crystalline regions suitable for the application [1]. The aim of this work is to follow the structure of the thin films over the course of crystallization and to characterize them in different intermediate states. In this way, the process and properties of the transition can be studied and better understood. Specifically, various methods (XRD, SEM, EDX, XPS, AFM, TEM) will be used to analyze the microstructures and compositions of the samples. In addition, DSC and TGA will be used to directly measure the crystallization and possible decomposition processes.

[1] Krbal, Milos, et al.: Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices. In: ACS Applied Nano Materials 2021 4 (9), 8834-8844. DOI: 10.1021/acsanm.1c01504

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