SKM 2023 – scientific programme

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O: Fachverband Oberflächenphysik

O 42: Poster: Nanostructures at Surfaces

O 42.4: Poster

Tuesday, March 28, 2023, 18:00–20:00, P2/EG

Activity of cerium oxide thin films prepared by atomic layer deposition using custom and commercial precursors — •Yuliia Kosto1, Carlos Morales1, Anjana Devi2, Karsten Henkel1, and Jan Ingo Flege11Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Strasse 1, Cottbus 03046, Germany — 2Inorganic Materials Chemistry, Ruhr University Bochum, Universitätsstraße 150, Bochum 44801, Germany

Atomic layer deposition (ALD) allows preparation of conformal coatings with possibility to control their thickness at the submonolayer level, making it a good tool for depositing active layers on 3D structures. Our group is working on cerium oxide-based materials for hydrogen detection, which is difficult at ambient conditions due to the low sensitivity and long response time of the sensors. The cerium oxide layers prepared by ALD contain a lot of defects and provide an opportunity to overcome these complications. Thickness and morphology of the oxide films play an important role in defining the Ce3+/Ce4+ ratio, as well as the interface with the used substrate. Here, we compare cerium oxide thin films deposited by ALD techniques on SiO2 and Al2O3 substrates. The results reveal that the interface to the substrate can considerably influence the reactivity of the cerium oxide toward hydrogen and oxygen. Preparation of the oxides using two different precursors (commercial Ce(thd)4 and custom Ce(dpdmg)3) has been demonstrated to affect the redox properties of the films, their reactivity, and the reversibility.

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