SKM 2023 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 93: Graphene II: Electronic Structure and Growth
O 93.8: Vortrag
Freitag, 31. März 2023, 12:15–12:30, GER 37
Defective graphene by topological design — Benedikt P Klein1,2, Matthew A Stoodley1,2, Joel Deyerling3, Michael Clarke4, Luke A Rochford1, Marc Walker2, Raymundo Marcial Hernandez5, Christian B Nielsen5, Lars Sattler6, Sebastian M Weber6, Gerhard Hilt6, Alexander Generalov7, Alexei Preobrajenski7, Leon BS Williams1,8, Tien-Lin Lee1, Alex Saywell4, Willi Auwärter3, Reinhard J Maurer2, and •David A Duncan1 — 1Diamond Light Source, UK — 2University of Warwick, UK — 3Technische Universität München, Germany — 4University of Nottingham, UK — 5Queen Mary University of London, UK — 6Carl von Ossietzky Universität Oldenburg, Germany — 7MAX IV, Lund, Sweden — 8University of Glasgow, UK
Defective graphene is a promising material for both applications in electronic devices and as substrates for modern catalysts. However, generating deliberate imperfection in graphene often relies on brute force methods, like ion sputtering. Herein, we demonstrate one-step bottom-up synthesis of defective graphene with incorporated 5- and 7-membered ring defects by using a polyaromatic feedstock that contains the same topology as the desired defect. Furthermore, the ratio of ideal to defective graphene could be controlled by the temperature used to grow the film. By a combination of X-ray standing waves, non-contact atomic force microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and density functional theory, we thoroughly characterise these networks and propose this method as a novel method of functionalising graphene.