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Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Poster I

HL 13.32: Poster

Montag, 18. März 2024, 15:00–18:00, Poster E

The influence of Band bending on valence band offsets determined by Kraut’s method: Modeling and experiment for polar-discontinuity doped LaInO3/BaSnO3 — •Georg Hoffmann1, Aysha A Riaz2, Anna Regoutz2, Oliver Brandt1, and Oliver Bierwagen11Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany — 2Department of Chemistry, University College London , London, UK

Two-dimensional electron gases (2DEGs) in LaAlO3/SrTiO3 heterostructures due to polar discontinuity have brought huge attention to perovskite oxides [1]. For LaInO3/BaSnO3 heterostructures, a predicted conduction band offset (CBO) of 1.6 eV confines a charge carrier density of up to 2×1014 cm−2 in the quantum well at the BaSnO3 side [2], while room temperature mobilities are higher by one order of magnitude compared to SrTiO3 based 2DEGs. To determine the CBO considering interfacial band bending the related valence band offset (VBO) is determined by Kraut’s method using x-ray photo electron spectroscopy (XPS) [3].

We developed a model that predicts XPS core-level (CL) shape and shift for given band profiles and thus related VBO correction. Synchrotron-based XPS data are interpreted with this model to determine band bending and VBO at the LaInO3/BaSnO3 interface.

[1] J. Mannhart, et al., MRS bulletin 33, 1027-1034 (2008). [2] W. Aggoune, and Claudia Draxl, npj Computational Materials 7, 174 (2021). [3] E. A. Kraut, et al., Phys. Rev. Lett. 44, 1620 (1980).

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