Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 21: Heterostructures, Interfaces and Surfaces I
HL 21.2: Vortrag
Dienstag, 19. März 2024, 09:45–10:00, EW 561
Depth profiling of defects with nanometer resolution at semiconductor interfaces using low-energy muons — •Thomas Prokscha1, Maria Martins1,2, Piyush Kumar2, Marianne Bathen2, Xiaojie Ni1, Judith Wörle2, and Ulrike Grossner2 — 1Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland — 2Advanced Power Semiconductor Laboratory, ETH Zurich, 8092 Zurich, Switzerland
Defects and structural changes at semiconductor interfaces are of fundamental importance for the performance of semiconductor devices. While a variety of characterization methods exists for the investigation of process-induced defects, most of these techniques cannot resolve the depth distribution of defects close to the interfaces, an information which is important to better understand the relation between these defects and the observed limitations in device performance. Here we use low-energy muon spin spectroscopy as a powerful tool to study the distribution of defects in semiconductors with unprecedented nanometer depth resolution. The technique is based on studying the effect of defects on the formation probability of hydrogen-like muonium states in semiconductors and semiconductor-oxide interfaces. We used proton irradiated Si and 4H-SiC to measure the effect of well-defined defect concentrations profiles on the formation of muonium states, and apply this new technique to the study of technologically relevant SiO2/Si and SiO2/SiC interfaces [1,2].
[1] M. Martins et al., Adv. Mat. Inter. 10, 2300209 (2023).
[2] P. Kumar et al., Phys. Rev. Appl. 19, 054025 (2023).