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HL: Fachverband Halbleiterphysik

HL 21: Heterostructures, Interfaces and Surfaces I

HL 21.7: Talk

Tuesday, March 19, 2024, 11:15–11:30, EW 561

Realization of Higher Order Topological Insulators in Hybrid Dielectric-Semiconductor Microcavities — •Johannes Düreth, Philipp Gagel, Simon Betzold, Siddhartha Dam, Christian G. Mayer, David Laibacher, Monika Emmerling, Sven Höfling, and Sebastian Klembt — Technische Physik, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

Since its introduction to the polariton community by El Daïf and co-workers in 2006 [1], the etch-and-overgrowth method has been a very versatile technique for the generation of photonic confinement. It is perfectly suited to manufacture large, uniform and complex potential landscapes since the confinement as well as its coupling can be finely tuned by controlling the etch-depth. Here, we improve on this method by using a dielectric top mirror consisting of SiO₂/TiO₂ layers instead of an epitaxially grown one. In recent years, topological photonics has emerged as a powerful tool to engineer traits of optoelectronic applications. We implement 0-dimensional higher order topological defects in a breathing Kagome lattice, as well as a 2-D Su-Schrieffer-Heeger (SSH) lattice. Additionally, we show polariton lasing from the corner defect of the breathing Kagome lattice and the 0-D defect of the 2D-SSH lattice, as well as their coherence properties [2].

[1] O. El Daïf et al., Appl. Phys. Lett. 88, 061105 (2006)
[2] P. Gagel, J. Düreth et al., in preparation (2023)