Berlin 2024 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 44: 2D Materials III: Electronic Structure (joint session O/TT)
O 44.8: Vortrag
Mittwoch, 20. März 2024, 12:15–12:30, MA 005
Direct visualization of conduction band electrons in gated single layer TMDC via micro ARPES — •Chakradhar Sahoo1, Yann in ’t Veld2, Alfred J. H. Jones1, Zhihao Jiang1, Paulina E. Majchrzak1, Kimberly Hsieh1, Kenji Watanabe3, Takashi Taniguchi4, Yong P. Chen1, Jill A. Miwa1, Malte Rösner2, and Søren Ulstrup1 — 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark — 2Institute for Molecules and Materials, Radboud University, 6525 AJ Nijmegen, the Netherlands — 3Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan — 4International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
Electric field induced doping effects in the electronic structure of single-layer (SL) semiconductors is crucial for electronic and optoelectronic applications. However, direct visualization of doped electronic structure remains challenging for in situ gated devices. Here, we apply in operando micrometer scale angle-resolved photoemission spectroscopy at the ASTRID2 light source to characterize the electronic structure of a SL WS2 gated device. Using micromechanical cleaving and transfer methods, the SL WS2 is partially contacted to a graphene top electrode and placed on a boron nitrite dielectric on a graphite back-gate. We directly visualize distinct conduction band populations, band gap renormalization and charge transfer processes across the bare WS2 and graphene/WS2 interface. Our observations provide a better understanding of band renormalization and carrier doping in 2D devices.