Berlin 2024 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 90: 2D Materials VI: Growth, Structure and Substrate Interaction
O 90.3: Vortrag
Donnerstag, 21. März 2024, 15:30–15:45, MA 005
Growth of high quality hexagonal boron nitride (h-BN) on surfaces of transition metals — Adrian Hemmi1, •Ari Paavo Seitsonen2, Michael S Altman3, Marcella Iannuzzi4, Thomas Greber1, and Huanyao Cun1 — 1Physik-Institut der Universität Zürich — 2Département de Chimie, École Normale Supérieure, Paris — 3Department of Physics, Hong Kong Unversity of Science and Technology — 4Chemie-Institut der Universität Zürich
The production of high-quality hexagonal boron nitride (h-BN) is essential for the ultimate performance of two dimensional (2D) materials-based devices, since it is the key 2D encapsulation material. We are working on the optimisation of the procedures to grow h-BN on surface of transition metals. Our recent achievements include the enhanced quality of the h-BN on Rh(111) via 2D distillation [ACS Nano 15, 1351-1357 (2021)], and a decisive guideline for fabricating high-quality h-BN on Pt(111) [Small 18, 2205184 (2022)]. We have found that it is crucial to exclude carbon from the h-BN related process, otherwise carbon prevails over boron and nitrogen due to its larger binding energy, thereupon forming graphene on metals after high-temperature annealing. We introduce the pyrolysis temperature Tp as an important quality indicator for h-BN on transition metals.
In order to understand better the underlying physical trends, we have performed systematic density functional theory calculations on 12 different hexagonally oriented transition metals [Nanoscale Advances, in Press; DOI: 10.1039/D3NA00472D]. We will discuss the experimental findings in light of the computed results.