Bonn 2025 – wissenschaftliches Programm
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QI: Fachverband Quanteninformation
QI 3: Semiconductor Spin Qubits I: Silicon
QI 3.3: Vortrag
Montag, 10. März 2025, 11:45–12:00, HS II
Single-qubit gates with enhanced and intrinsic spin-orbit interaction via electron shuttling — •Akshay Menon Pazhedath1,2, Alessandro David1, Tommaso Calarco1,2,3, and Felix Motzoi1,2 — 1Peter Grünberg Institute-Quantum Control (PGI-8), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany — 2Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Cologne, Germany — 3Dipartimento di Fisica e Astronomia, Università di Bologna, 40127 Bologna, Italy
Electric Dipole Spin Resonance (EDSR) is a technique mediated by the spin-orbit interaction to obtain high-fidelity single-qubit gates with semiconductor spins. To overcome the weak intrinsic spin-orbit coupling of silicon-based devices, a synthetic spin-orbit field is usually introduced by a carefully designed micro-magnet. However, micro-magnets also increase the coupling of the spin with voltage noise and their placement is challenging for industrial fabrication processes. In this work we look at the larger spatial mobility of the recently emerging spin-shuttling architectures as an opportunity to perform EDSR without the help of a micro-magnet. We simulate the use of large amplitude oscillations to increase the resonance strength for various spin-orbit settings of the silicon heterostructure. We also explore the effect that the valley degree of freedom has on gate times and fidelities. Furthermore, we investigate the feasibility of performing fast high-fidelity single-qubit gates by employing simple optimal control techniques.
Keywords: Quantum control; Quantum Gates; Quantum dots; Valley degree of freedom; Electric Dipole Spin Resonance