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MON: Monday Contributed Sessions

MON 23: Poster Session: Fundamental Aspects and Model Systems

MON 23.46: Poster

Monday, September 8, 2025, 18:30–20:30, ZHG Foyer 1. OG

Exploring Electrical Transport in the 2D Quantum Material FePSe₃ — •Paul Perl¹, Lars Thole¹, Sonja Locmelis², and Rolf J. Haug¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — ²Institut für Anorganische Chemie, Leibniz Universität Hannover, 30167 Hannover, Germany

Thin-layer systems of the quantum 2D material iron phosphorus triselenide (FePSe₃) exhibit promising potential for use in innovative devices [1]. In this study, we investigate the electrical properties of flakes with thicknesses ranging from 14 nm to 28 nm, including activation energy and Schottky barriers with various contact materials, to develop a deeper understanding of the material’s behavior. The bulk crystals were synthesized via chemical vapor transport, and the thin flakes were then exfoliated using the scotch tape method. Electrical contacts for the exfoliated flakes were created using electron beam lithography followed by physical vapor deposition. Additionally, we observe a memory effect induced by the application of a backgate voltage, suggesting potential for FePSe₃ in memory devices.
[1] Z. Zhao et al., npj 2D Mater. Appl. 9, 30 (2025)

Keywords: Electrical Transport; FePSe3; 2D Material; Metal Selenophosphates; Memory Effect