Dresden 2026 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 12: 2D Materials I
DS 12.8: Talk
Wednesday, March 11, 2026, 11:30–11:45, REC/C213
Modeling Pressure-Induced Exciton Screening in hBN/WSe2/hBN Heterostructures — •Adlen Smiri1, Shalini Badola2, Amit Pawbake2, Clément Faugéras2, and Iann C. Gerber1 — 1Université Fédérale de Toulouse Midi Pyrénées, INSA-CNRS-UPS, LPCNO, 135 Av. de Rangueil, 31077 Toulouse, France — 2Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, INSA-T, Grenoble and Toulouse, France.
Hydrostatic pressure is an effective tool to tune excitonic properties in two-dimensional semiconductors. We investigate the pressure dependence of excitonic Rydberg states in a WSe2 monolayer encapsulated in hBN and observe a reduction of the 1s-2s and 1s-3s energy separations with increasing pressure. First-principles calculations indicate negligible changes in the band structure and effective masses, pointing to pressure-modified dielectric screening as the main mechanism. A microscopic dielectric model for the WSe2 monolayer with an effective vacuum gap reproduces the observed excitonic shifts, demonstrating that enhanced screening governs exciton renormalization. These results provide a quantitative framework for tuning excitonic interactions in van der Waals heterostructures.
Keywords: Exciton; Dielectric screening; hydrostatic pressure