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DS: Fachverband Dünne Schichten

DS 12: 2D Materials I

DS 12.9: Talk

Wednesday, March 11, 2026, 11:45–12:00, REC/C213

Above room temperature ferromagnetism in wafer-scale Fe₃GaTe₂/SiC and the origin of double-step hysteresis in MBE-grown Fe₃GaTe₂ films — •Tauqir Shinwari¹, Victor Ukleev², Chen Luo², Kacho Imtiyaz Ali Khan¹, Florin Radu², and Joao Marcelo Jordao Lopes¹ — ¹Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — ²Helmholtz Zentrum Berlin for Materialien und Energie, Albert-Einstein Straße 15, 12489 Berlin, Germany

Two-dimensional (2D) magnetic materials provide a versatile platform for next-generation spintronic devices, where scalable growth and robust ferromagnetism are the key factors. Fe₃GaTe₂ is a 2D ferromagnet with a high Curie temperature (∼ 360K) and strong perpendicular magnetic anisotropy, making it a particularly promising candidate for energy-efficient spin-based technologies. Until now, most studies on Fe₃GaTe₂ have relied on millimeter-sized bulk crystals and exfoliated flakes, which are unsuitable for wafer-scale integration and reproducible device processing. In this work, we demonstrate high-quality, large-area epitaxial growth of Fe₃GaTe₂ thin films directly on SiC(0001) substrates by MBE. The films exhibit robust above-room-temperature ferromagnetism together with strong out-of-plane magnetic anisotropy, as confirmed by magnetometry and element-specific x-ray techniques. A double-step hysteresis loop is observed in MBE-grown Fe₃GaTe₂ films, pointing to the coexistence or coupling of distinct magnetic subsystems, which will be discussed in the context of Fe site selectivity, thickness dependence, and interfacial effects.

Keywords: MBE; 2D materials; Spintronics; Magnetism; Spectroscopy