Dresden 2026 – scientific programme
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DS: Fachverband Dünne Schichten
DS 14: 2D Materials II (joint session DS/HL)
DS 14.9: Talk
Wednesday, March 11, 2026, 17:15–17:30, REC/C213
High-performance graphene field-effect transistors on cyclic olefin copolymer substrates for advanced sensor applications — •Hamid Reza Rasouli1, Begimai Adilbekova1, Ghazaleh Eshaghi1, Axel Printschler1, David Kaiser1, Marco Reinhard2, Alexander Rolapp2, Tom Reinhold2, Uwe Hübner3, Michael Meister2, and Andrey Turchanin1 — 1Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743 Jena, Germany — 2IMMS Institut für Mikroelektronik- und Mechatronik-Systeme gemeinnützige GmbH (IMMS GmbH), 99099 Erfurt, Germany — 3Leibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, Germany
While graphene field-effect transistors (GFETs) are highly attractive for liquid-phase sensing, their performance on SiO2/Si substrates is compromised by oxide-induced charge trapping, leading to pronounced hysteresis and reduced stability. We present arrays of GFETs microfabricated on cyclic olefin copolymer (COC) substrates, which passivate SiO2 providing a low-trap and chemically inert platform in combination with flatness. GFET devices on COC demonstrate remarkably improved Dirac point stability, negligible hysteresis even in low-ionic strength buffers, and reproducibility across the arrays. For their functionalization, we employ an ultrathin carbon nanomembrane (CNM) that enables robust immobilization of various capture molecules while preserving graphene's transport properties. The CNM/GFET/COC architecture provides stable liquid-phase operation highlighting its strong potential for scalable and advanced sensor applications.
Keywords: graphene field-effect transistors; surface passivation; carbon nanomembranes; sensors