Dresden 2026 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 16: Thin Film Application

DS 16.2: Talk

Thursday, March 12, 2026, 09:45–10:00, REC/C213

Enhanced resistive switching in hybrid perovskite-MoS2 memristors — •Georgios Chatzigiannakis^1,2, Anastasia Soultati¹, Spiros Gardelis², and Maria Vasilopoulou¹ — ¹INN, NCSR Demokritos, 15341 Athens, Greece — ²Physics Department, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, 15784 Athens, Greece

Memristors are emerging two-terminal devices with tunable resistance states and strong potential for next-generation non-volatile memory and neuromorphic computing. Their reversible switching between high- and low-resistance states (HRS/LRS), combined with non-volatile information retention, makes them attractive for energy-efficient data storage. Metal halide perovskites have recently gained interest in thin-film memristive technologies due to their low fabrication cost, solution processability, and rich ionic dynamics, while 2D TMDs such as MoS2 provide excellent interfacial properties that modulate charge transport and defect chemistry.

We demonstrate a hybrid perovskite memristor incorporating MoS2 nanosheets, exhibiting significantly enhanced electrical performance compared to pristine devices. The MoS*-integrated device achieves endurance up to 200 switching cycles, stable retention beyond 12 000 s, and a large memory window (HRS:LRS ~100). In contrast, the pristine device shows only ~25 cycles and a window below 50. These results highlight the crucial role of TMD:perovskite interfaces in stabilizing ion-migration pathways and improving resistive-switching reliability in hybrid thin-film memristors.

Keywords: perovskites; TMDs; molybdenum disulfide; Hybrid Perovskite Memristors; Resistive Switching