Dresden 2026 – scientific programme
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DS: Fachverband Dünne Schichten
DS 16: Thin Film Application
DS 16.8: Talk
Thursday, March 12, 2026, 11:30–11:45, REC/C213
Enhancement of photoluminescence of Er3+ ions by Mie-resonant silicon nitride metasurfaces — •Fengkai Wei1,2, Carsten Ronning1, Duk-Yong Choi2, Xinru Ji3, and Tobias Kippenberg3 — 1Institut für Festkörperphysik, Friedrich Schiller University Jena, Germany — 2Research School of Physics, Australian National University, Australia — 3Institute of Physics, Swiss Fed- eral Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Mie-resonant high-index dielectric nanoparticles and metasurfaces have been suggested as a viable platform for enhancing both electric and magnetic dipole transitions of fluorescent emitters. While previous work has demonstrated the enhancement of magnetic dipolar transitions from Eu3+ ions using silicon nanocylinders, this approach was limited by silicon's strong absorption at the Eu3+ emission wavelength in visible range. Erbium features a characteristic infrared emission wavelength of 1550nm, which is widely used in telecommunication. It makes Er a good candidate of emitters in metasurface for infrared applications. This study explores the enhancement of Er3+ ions using dielectric metasurfaces composed of Mie-resonant silicon nitride metasurface. Er3+ ions were introduced into the metasurface via ion implantation. Strong room-temperature photoluminescence (PL) was only observed after annealing, which activates the ions.Maximum PL enhancement occurred at a nanocylinder radius of ~410 nm, aligning with simulations. This study demonstrated a significant ~40-fold PL enhancement on metasurface over a planar reference.
Keywords: Metasurface; Ion Implantation; Mie Resonance