Dresden 2026 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.19: Poster

Thursday, March 12, 2026, 18:30–20:30, P2

Structural and optical properties of undoped β-Ga2O3 thin films deposited by ultrasonic spray pyrolysis — •Polina Shamrovska, Narmina Balayeva, and Dietrich Zahn — Technische Universität Chemnitz, Chemnitz, Germany

β-Ga2O3 thin films have gained significant research interest due to their wide bandgap, high thermal stability and breakdown voltage, making them suitable for e.g. UV photodetectors. Here, β-Ga2O3 thin films were deposited on c-plane sapphire substrates via ultrasonic spray pyrolysis, a cost-effective technique suitable for large-scale production. The deposition was performed with Ga(NO3)3 dissolved in a 1 : 1 water-ethanol mixture at a substrate temperature of 190 °C and post-deposition annealing was performed at 1000 °C. The films were characterized by Raman, AFM, XRD, optical transmittance, and conductivity measurement.

The stoichiometric β-phase Ga2O3 films revealed a preferred (-201) orientation in agreement with previous results [1]. The samples show transparency of up to 85% in the visible range and the conductivity increases with increasing film thickness. The results obtained reveal that ultrasonic spray pyrolysis allows the fabrication of highly crystalline and transparent β-Ga2O3 films suitable for further studies as solar-blind UV photodetectors.

[1] Akazawa, Housei, Vacuum, 2016, 123: 8-16.

Keywords: thin films; Ga2O3 on sapphire; spray coating; transmittance; preferred orientation