Dresden 2026 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.23: Poster
Thursday, March 12, 2026, 18:30–20:30, P2
Surface Investigations of Ga-polar wz-GaN Grown by Plasma Assisted MBE — •Abdul Qadir Shabaz1,2, Anees Ul Hassan1,2, Fabian Ullmann1,2, and Stefan Krischok1,2 — 1TU Ilmenau, Ehrenbergstraße 29, 98693 Ilmenau — 2Zentrum für Mikro- und Nanotechnologien, Gustav-Kirchoff-Straße 7, 98693 Ilmenau
Since very high polarization gradients are predicted for wz-GaN/rs-ScN interfaces, well-oriented, clean Ga-polar wz-GaN surfaces are required in order to grow rs-ScN on top of this layer in a ultra high vacuum to achieve high quality interfaces. These thin layers were grown via plasma-assisted molecular beam epitaxy on 6H-SiC substrate. X-ray photoelectron spectroscopy (XPS), ultra violet photo electron spectroscopy (UPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were performed to investigate electronic structure, composition and morphology of the surfaces.
Keywords: GaN; ScN; MBE