Dresden 2026 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.2: Poster
Thursday, March 12, 2026, 18:30–20:30, P2
Structural and electronic characterization of sputtered MoSe2 and WSe2 thin films on ITO substrates using synchrotron-based XAFS/XRF techniques — •Sabit Horoz1,2, Emre Timuçin Tabaru1, Latif Ullah Khan3, Messaoud Harfouche3, and Ali Karatutlu1,4 — 1Sivas University of Science and Technology, Sivas, Türkiye — 2Sivas Cumhuriyet University Nanophotonics Application and Research Center-CÜNAM, 58140 Sivas, Turkey — 3SESAME, Allan, Jordan — 4Bilkent University Ankara, Türkiye
Two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2) exhibit remarkable optoelectronic and catalytic properties. In this work, thin films of MoSe2 and WSe2 were fabricated on indium-tin oxide (ITO) substrates using a sputtering technique and analyzed at the SESAME Synchrotron facility through X-ray Absorption Fine Structure (XAFS) and X-ray Fluorescence (XRF) spectroscopy. XAFS results at the W L3- and Mo K-edges confirmed well-ordered W-Se and Mo-Se bonds, demonstrating crystalline TMD structures. Upon annealing up to 170 °C in air, partial oxidation led to the formation of WO3 and MoO3 phases, accompanied by a visible color change from silver to transparent. Complementary Raman, UV-VIS-NIR, and ellipsometric analyses supported these findings.
Keywords: MoSe2; WSe2; sputtered thin films; XAFS; annealing