Dresden 2026 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.40: Poster

Thursday, March 12, 2026, 18:30–20:30, P2

Optimizing Crystallization Kinetics and Reducing Stochasticity of the Phase-Change Materials Sb2Se3 and Ge2SeTe through Controlled Crystalline Interface Growth — •Ramon Pfeiffer, Ramon Schmidmeier, Laura Gundermann, and Matthias Wuttig — I. Institute of Physics (IA), RWTH Aachen University, Germany

Chalcogenide phase-change material (PCM) alloys such as Antimony Triselenide (Sb2Se3) and Germanium Selenide Telluride (Ge2SeTe) can be switched repeatedly with low optical losses, making them interesting contestants for integrated photonic circuits. However, by switching from the predominately investigated as-deposited phase these materials are characterized by a relatively slow crystallization speed and high stochasticity. To address these shortcomings, we investigate methods such as the recrystallization from differently melt-quenched phases and a crystalline ring. The later approach, allows for controlled growth from a crystalline interface. An increase of crystallisation speed and decrease of stochasticity is verified by a pump probe setup and through Electron Backscatter Diffraction (EBSD) measurements respectively.

Keywords: Electron backscatter diffraction; Phase Change Material; laser-induced switching; amorphization; crystallization