Dresden 2026 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.42: Poster

Thursday, March 12, 2026, 18:30–20:30, P2

Intercalation of thin Fe-films at the Graphene/SiC Interface — •Niels Rösch^{1, 2}, Fabian Göhler^{1, 2}, Rico Ehrler^{1, 2}, Susanne Wolff^{1, 2}, Olav Hellwig^{1, 2}, and Thomas Seyller^{1, 2} — ¹Technische Universität Chemnitz, Institut für Physik, 09126 Chemnitz — ²Forschungszentrum für Materialien, Architekturen und Integration von Nanomembranen, 09126 Chemnitz

The intercalation of graphene on silicon carbide (SiC) with different materials is an extensively studied field of research. The intercalation of metals into the graphene/SiC interface offers a route to tune the structural, electronic and magnetic properties of the system [1,2].

In the present study, we demonstrate the successful intercalation of iron (Fe) between graphene and SiC. 4H-SiC(0001) substrates were used to prepare the buffer layer (BL) precursor by polymer assisted sublimation growth (PASG) [3]. Intercalation was carried out under ultra-high vacuum (UHV) conditions by depositing 2 nm Fe atop the BL precursor at 300 ^∘C, followed by an annealing at 750 ^∘C for 30 min.

The successful intercalation of iron at the BL/SiC interface was confirmed by photoelectron spectroscopy and electron diffraction. Magnetic characterization via superconducting quantum interference device magnetometer (SQUID) revealed that the intercalated Fe layer exhibits ferromagnetic behavior.

[1] A. A. Rybkina et al., Phys. Rev. B 104 (2021) 155423.
[2] N. Briggs et al., Nanoscale 11 (2019) 15440. 4.
[3] M. Kruskopf et al., 2D Mater. 3 (2016) 041002.

Keywords: Epitaxial graphene; Silicon carbide; Intercalation