Dresden 2026 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.49: Poster

Thursday, March 12, 2026, 18:30–20:30, P2

Evolution of voids in molybdenum disilicide during electromigration experiments — •Julia Baldauf, Dennis Mitrenga, Tim Fink, and Philipp Kellner — CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany

Molybdenum disilicide (MoSi2) is used in macroscopic and microscopic heating devices.

The widespread use of MoSi2 is caused by its melting point of 2030°C and its combability with CMOS processes. Because of the high melting point MoSi2 has been considered immune to electromigration phenomena. In reality electromigration is one of the main causes of chip failure for microheaters employing MoSi2 at temperatures of 600°C up to 900°C.

Artificially generated voids were made by using a gallium based focused ion beam, are approximately circular in shape and located near the center of a line under test made of MoSi2. We employed a laser scanning microscopy technique to observe changes of the shape of artificially generated voids. Slight changes in the shape of the voids and the formation of hillocks on the rim of the voids have been observed. Because of the low volume of the migrated material the chemical analysis remains challenging.

Machine learning is used to determine the effective ion charges used in Finite-Element-Methode-simulations of a digital twin. The digital twin will be used in conjunction with the experimental data to evaluate the effective ion charge determined by employing the machine learning algorithm.

Keywords: electromigration; molybdenum disilicide