Dresden 2026 – scientific programme
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DS: Fachverband Dünne Schichten
DS 7: Thermoelectric and Phase Change Materials
DS 7.5: Talk
Tuesday, March 10, 2026, 11:15–11:30, REC/B214
Effect of Ge doping and thickness on anomalous Nernst effect in Fe4N thin films — •Robin K. Paul1, Jakub Vít2, Karel Knížek2, Petr Levinský2, Ondřej Kaman2, Mariia Pashchenko2, Lenka Kubíčková2, Kyo-Hoon Ahn2, Markéta Jarošová2, Joris More-Chevalier2, Stanislav Cichoň2, Tomáš Kmječ3, Jaroslav Kohout3, Marcus Hans4, Stanislav Mráz4, Jochen M. Schneider4, Giovanni d’Andrea1, Lambert Alff1, Esmaeil Adabifiroozjaei1, Leopoldo Molina-Luna1, Oliver Gutfleisch1, and Imants Dirba1 — 1TU Darmstadt, Darmstadt, Germany — 2Institute of Physics of the CAS, Praha, Czech Republic — 3Charles University, Praha , Czech Republic — 4RWTH, Aachen, Germany
Anomalous Nernst Effect(ANE)-based devices have recently emerged as a promising alternative to Seebeck based ones, offering simpler geometries. However, their adoption is constrained by lower efficiencies compared to Seebeck-based counterparts. This study focuses on exploring materials with high ANE coefficients. Among the candidates, Fe4N has attracted attention due to its cost-effectiveness, and tunability through elemental doping. DFT calculations indicate that doping Fe4N with Ge can enhance its ANE coefficient. In this work, thin films of doped Fe4−xGexN were fabricated onto MgO substrates. The evolution of crystal structure and microstructure are systematically characterized correlating with Nernst effect. ANE is also reported to increase with decrease in film thickness which was investigated by preparing Fe4N films of thickness from 5nm to 50nm.
Keywords: Thermoelectrics; Nernst effect; Anomalous Nernst effect; Iron nitrides; Fe4N