DS 9: Thin Film Properties III: Oxides
Tuesday, March 10, 2026, 14:00–15:15, REC/C213
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14:00 |
DS 9.1 |
Analysis of the MgF2 || VO2 Interface in Applications as Smart Windows by Secondary Ion Mass Spectrometry (SIMS) — •Yan Ravil Wollenweber-Bienerth, Peter J. Klar, Anja Henss, and Martin Becker
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14:15 |
DS 9.2 |
Modification of crystal structure of TiO2 thin films for artificial photosynthesis — •Lauri Palmolahti
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14:30 |
DS 9.3 |
Investigation of epitaxial ITO layers on YSZ as a transparent conductive back contact for photoelectrochemical applications — •Margaretha Huber, Sergej Levashov, Tsedenia Zewdie, Ian D. Sharp, and Johanna Eichhorn
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14:45 |
DS 9.4 |
Room-temperature H2 gas sensing in ultra-thin SnO2 films grown via atomic layer deposition — •Rudi Tschammer, Dominic Guttmann, Carlo Tiebe, Karsten Henkel, Carlos Morales, and Jan Ingo Flege
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15:00 |
DS 9.5 |
Composition and band gap of aluminum alloyed beta-gallium oxide determined by XPS — •Lukas Schewe, Jana Rehm, Ming-Chao Kao, Vedran Vonk, Zbigniew Galazka, Saud Bin Anooz, Andreas Popp, and Jan Ingo Flege
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