Dresden 2026 – scientific programme
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FM: Fachverband Funktionsmaterialien
FM 11: Poster Session Functional Materials
FM 11.14: Poster
Tuesday, March 10, 2026, 18:00–20:30, P4
Dual Strategy Engineering of Zn4Sb3: Indium Doping and ZnO Coating for High zT — •Abhishek Pandey1, Amin Bahrami2, and Kornelius Nielsch3 — 1Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, Dresden 01069, Germany — 2Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, Dresden 01069, Germany — 3Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, Dresden 01069, Germany
Zn4Sb3 is one of the promising thermoelectric materials due to its very low thermal conductivity and favorable electronic properties for high TE performance. However, its practical application to TE device is limited by structural instability and Zinc-ion migration, which lead to the formation of zinc whiskers and degradation of TE performance. In this work, a dual-strategy approach has been adopted to enhance and stabilize Zn4Sb3, (1) Indium doping, and (2) ZnO surface coating of powder. Indium substitution within the Zn4Sb3 lattice is shown to increase the figure of merit (zT). In parallel the bulk modification, ZnO coating on Zn4Sb3 particles acts as a diffusion barrier that mitigates zinc migration and whisker formation, which improves the structural robustness during prolonged thermal cycling.
Keywords: Thermoelectric Materials; Atomic Layer Deposition Technique; Thermal stability; Figure of Merit; Zn4Sb3