Dresden 2026 – scientific programme

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FM: Fachverband Funktionsmaterialien

FM 11: Poster Session Functional Materials

FM 11.24: Poster

Tuesday, March 10, 2026, 18:00–20:30, P4

Phase and microstructure evolution of SnO_x:Ta thin films as a function of the oxygen partial pressure during deposition — Cecilia Bauden¹, Lukas Prager¹, Frans Munnik¹, Fabian Ganss¹, Harish Parala², Anjana Devi², Carlos Romero-Muniz³, Ramon Escobar-Galindo³, and •Matthias Krause¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — ²IFW Dresden, Dresden, Germany — ³Universidad de Sevilla, Sevilla, Spain

Recent research on SnO₂-based TCOs has focused on Ta-doped SnO₂ (TTO), since it surpasses In₂O₃:Sn and ZnO:Al in thermal stability under vacuum and in air [1, 2]. This work presents a Raman spectroscopy and XRD study on the phase and microstructure evolution of SnO_x:Ta thin films as a function of the oxygen partial pressure during thin film deposition by reactive DC magnetron sputtering. At low O₂ flow rates a phase structure comprising metallic β-Sn, SnO and Sn₃O₄ without incorporated Ta is found. Higher O₂ flow rates yield the formation of the rutile structure of SnO₂:Ta, where Ta replaces Sn as Ta_Sn and transfers free charge carriers into the Sn 5s* conduction band [3]. A resistivity minimum of 1.3 x 10⁻³ Ω cm, a maximum mobility 16 cm² (Vs)⁻¹, and a distinct reflectivity edge in the NIR were found for the films with the best transport properties.

[1] F. Lungwitz et al., SolMat 196, 84-93 (2019); [2] M. Krause et al., J. Mat. Chem. A 11, 17686-17698 (2023); [3] M. Krause et al., J. Mat. Chem. A 13, 15128-15139 (2025).

Keywords: Transparent conductive oxides; Ta-doped tin oxide; Phase structure; Transport properties; Magnetron sputtering