Dresden 2026 – scientific programme
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FM: Fachverband Funktionsmaterialien
FM 11: Poster Session Functional Materials
FM 11.34: Poster
Tuesday, March 10, 2026, 18:00–20:30, P4
Understanding the formation of metal-semiconductor contacts in ferroelectric p-type oxides — •Ailu Sackey1, Ruben Dragland1, Egil Tokle1, Zewu Yan2,3, Edith Bourret2, Jan Schultheiss1, Mario Hentschel4, and Dennis Meier1,5 — 1NTNU, Trondheim, Norway — 2Lawrence Berkeley National Laboratory, Berkeley, CA, USA — 3ETH Zurich, Zürich, Switzerland — 4University of Stuttgart, Stuttgart, Germany — 5University of Duisburg-Essen, Duisburg, Germany
Ferroelectric semiconductors exhibit highly tunable electronic responses, opening new pathways for nanoelectronics beyond Si-based approaches. Of particular interest are functional properties that arise at internal interfaces in ferroelectrics, such as domain walls or phase boundaries, which, when leveraged, can serve as ultra-small active elements or as extended 3D networks, requiring a thorough understanding of the contacts used for current injection and sensing.
Here we investigate metal-semiconductor contacts formed by deposited electrodes on the surface of the model p-type ferroelectric ErMnO3. By cation doping and O2 annealing, we methodically modify the charge carrier distribution and monitor the related changes. We find that donor doping promotes ohmic contact formation, whereas annealing in O2-rich atmospheres leads to Schottky-like barriers. The results align with expected Fermi-level shifts and band-bending phenomena described by traditional semiconductor physics. Our findings offer fundamental guidance for controlling the contact formation in hexagonal manganites and related p-type ferroelectric semiconductors.
Keywords: Ferroelectricity; Ohmic contact formation; Oxide electronics