Dresden 2026 – scientific programme
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FM: Fachverband Funktionsmaterialien
FM 19: Advanced Microscopy and Tomography for Functional Materials
FM 19.1: Talk
Thursday, March 12, 2026, 10:15–10:30, BEY/0E40
Electron Beam-Induced Currents as a Quantitative Probe for Nanoscale Semiconductor Devices — •Sebastian Schneider1, Sebastian Beckert1, René Hammer2, Markus König3, Grigore Moldovan2, Darius Pohl1, and Bernd Rellinghaus1 — 1Dresden Center for Nanoanalysis (DCN), TU Dresden, Dresden, Germany — 2Point Electronic GmbH, Halle (Saale), Germany — 3Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
Electron beam-induced current (EBIC) mapping in the scanning transmission electron microscope (STEM) enables the direct visualization of charge carrier transport with nanometer resolution. We present a comparative STEM-EBIC study on silicon photodiode lamellae prepared by gallium and xenon focused ion beam milling. The EBIC mapping reveals the p-n junction and allows for the extraction of the effective electron and hole diffusion lengths as a function of local thickness. These values are up to three orders of magnitude smaller than bulk EBIC results, highlighting strong surface recombination and preparation-induced artifacts. Complementary I-V measurements show significant deviations from the expected diode-like behavior, which we attribute to high resistive contacts at the metal-semiconductor interfaces. Our findings emphasize the critical role of sample preparation for quantitative EBIC analysis.
Financial support by the DFG through TRR 404, project no. 528378584, is gratefully acknowledged.
Keywords: TEM; STEM; EBIC; Photodiode