Dresden 2026 – scientific programme
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FM: Fachverband Funktionsmaterialien
FM 19: Advanced Microscopy and Tomography for Functional Materials
FM 19.9: Talk
Thursday, March 12, 2026, 12:30–12:45, BEY/0E40
Toward Atomic-scale Imaging of Resistive Switching Mechanisms in Prussian Blue Memristors — •Mohammed Fayis Kalady1, Johannes Schultz1, Michael Pohlitz2, Falk Röder1, Darius Pohl3, Daniel Wolf1, and Axel Lubk1,4 — 1Leibniz Institute for Solid State and Materials Research, Dresden, Germany — 2Faculty of Physical Engineering/Computer Sciences, University of Applied Sciences, Zwickau, Germany — 3DCN, TU Dresden, Germany — 4IFMP, TU Dresden, Germany
Prussian blue and its analogues are promising materials for memristive devices based on resistive switching. To obtain a microscopic understanding of the structural and chemical processes responsible for switching, we employed a detailed high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy combined with electron energy loss and energy dispersive x-ray spectrum imaging (STEM-EELS and STEM-EDX) studies on pristine films and on films previously subjected to electrical biasing. The pristine film exhibits a homogeneous distribution of K, Fe, C, N, and O, whereas the electrically biased regions display clear nanoscale modifications, including local changes in elemental distribution and a phase transition from Prussian blue to Prussian white. The electrical measurements on the bulk reveal transitions between low-resistance and high-resistance states, demonstrating bipolar switching behavior across multiple cycles. These results provide the first steps toward in-situ TEM biasing experiments aimed at directly resolving elemental migration pathways and phase evolution under applied voltages.
Keywords: Prussian blue; Resistive switching; Memsristor; Transmission electron microscopy