Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 1: Optical Properties I

HL 1.3: Talk

Monday, March 9, 2026, 10:00–10:15, POT/0006

Intensity-dependent excitonic second- and third-harmonic generation enhanced by static electric fields — Ruixin Zuo¹, •Matthias Reichelt¹, Cong Ngo¹, Xiaohong Song², Weifeng Yang^2,3, and Torsten Meier¹ — ¹Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Warburger Straße 100, D-33098 Paderborn, Germany — ²School of Physics and Optoelectronic Engineering, Hainan University, Haikou 570288, China — ³Center for Theoretical Physics, Hainan University, Haikou 570288, China

The many-body Coulomb interaction plays a decisive role in the ultrafast photoinduced carrier dynamics governing semiconductor high-harmonic generation, see, e.g., [1,2]. Moreover, static electric fields were shown to surprisingly enhance excitonic second- and third-harmonic generation [3]. Here, we study this enhancement for material models corresponding to transition-metal dichalcogenides and study the dependencies on several parameters.

[1] A. Trautmann, R. Zuo, G. Wang, W.-R. Hannes, S. Yang, L. H. Thong, C. Ngo, J. T. Steiner, M. Ciappina, M. Reichelt, H. T. Duc, X. Song, W. Yang, and T. Meier, Proc. SPIE 11999, 1199909 (2022).
[2] J. Hader, J. Neuhaus, J. V. Moloney, and S. W. Koch, Opt. Lett. 48, 2094 (2023).
[3] R. Zuo, M. Reichelt, C. Ngo, X. Song, W. Yang, and T. Meier, arXiv:2511.05112.

Keywords: high-harmonic generation; semiconductors; transition-metal dichalcogenides