Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 11: Focus Session: Quantum Emitters in 3D Semiconductors
HL 11.6: Talk
Monday, March 9, 2026, 17:45–18:00, POT/0251
Generation of Vacancy-Based Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins — •Leonard K.S. Zimmermann1, 2, Jonah Heiler1, 2, Samuel C. Eserin3, Matthias Rupp1, Ella B. Schneider3, Jean-Nicolas Audinot1, Steven K. Clowes3, Ben N. Murdin3, Stephan Kucera1, and Florian Kaiser1,2 — 1Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg — 2University of Luxembourg, Esch-sur-Alzette, Luxembourg — 3Advanced Technology Institute, University of Surrey, United Kingdom
Silicon carbide (SiC) has emerged as a promising colour centre platform for scalable quantum systems based on nanophotonics and -electronics. Integration into nanophotonic circuits requires sub-micron three-dimensional positioning control of colour centres, achievable via ion implantation to create vacancies followed by thermal annealing. Spin-optical quantum coherence properties vary significantly with implantation parameters. We present initial results from an ongoing implantation-annealing study for generating VSi and VSiVC colour centres in 4H-SiC. Helium and Neon are implanted with varied doses at different energies, and different annealing processes for colour centre formation are investigated. We summarise single-emitter yield and show basic spin coherence measurements for the different processes. Our study highlights parameters necessary for optimal generation conditions of colour centres in 4H-SiC.
Keywords: Colour Centres; Ion Implantation; Divacancy; Silicon Vacancy