Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 12: Heterostructures, Interfaces and Surfaces: Photonics
HL 12.1: Talk
Monday, March 9, 2026, 16:45–17:00, POT/0051
Surface patterning for high index contrast AlOx/GaAs distributed Bragg reflectors — •Frederike Jaeschke1,2, Yurii Kutovyi1,2, Nils von den Driesch1,2, Serhii Darahan3, Christoph Krause1, Benjamin Bennemann1, Frank Vewinger3, and Alexander Pawlis1,2 — 1Peter Gruenberg Institute, Forschungszentrum Juelich GmbH, Juelich, Germany — 2JARA-Fundamentals of Future Information Technology, Juelich-Aachen Research Alliance, Aachen, Germany — 3Institut für Angewandte Physik, Universitaet Bonn, Bonn, Germany
Enhancing the refractive index contrast between the constituent materials in a distributed Bragg reflector (DBR) leads to stopband broadening and an increase in the attainable reflectivity for a given number of layer pairs, thereby mitigating the impact of growth-induced thickness variations on optical properties. One promising approach involves the post-growth wet-oxidation of AlAs to amorphous AlOx, which substantially increases the index contrast relative to conventional AlAs/GaAs stacks. In this talk, we present optimization of the AlAs/GaAs DBR growth parameters alongside different substrate patterning approaches which facilitate controlled lateral oxidation for micrometer-scale AlOx/GaAs pillar structures. We compare the optical properties of wet-oxidized AlOx/GaAs and as-grown AlAs/GaAs DBRs to explore the potentials and limitations of such pre-structuring concepts for realizing high index contrast DBRs with decreased growth times and improved layer thickness accuracy.
Keywords: DBR; wet oxidation; surface patterning; MBE; AlOx