Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 16: Focus Session: Quantum Emitters in 2D Semiconductors

HL 16.5: Invited Talk

Tuesday, March 10, 2026, 11:45–12:15, POT/0081

Defect-driven quantum emission in 2D materials — •Magdalena Grzeszczyk — IFIM, NUS, 117544, Singapore

Carbon-doped hexagonal boron nitride (hBN:C) provides a compelling 2D analogue to classical wide-bandgap hosts such as ruby (Cr:Al2O3), where isolated impurity centers give rise to sharp, stable optical transitions. These point defects have emerged as robust and manipulatable single-photon emitters (SPEs). By combining a broad suite of experimental techniques with advanced theoretical modeling, we introduce a consistent assignment of the observed excitations in hBN:C to the most likely underlying defect complexes. The described defect states residing in close proximity to the surface present an ideal sensors of local fields at the nanoscale. An example of how the local dielectric environment strongly modulates these centers, producing distinct spectral shifts will be discussed. Additionally, these defect states can be electrically excited in hBN-based light-emitting diode structures, providing a route toward integrated quantum emitters in van der Waals devices. Finally, ZnPS3 will be introduced as an emerging new host of SPEs. As a representative member of a broader family of layered MPX3 compounds, such as MnPS3 and FePS3, this emergent host opens new platform for future exploration of SPEs with intrinsic magnetic tunability.

Keywords: hexagonal boron nitirde; single photon emission; quantum materials; 2D materials