Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 16: Focus Session: Quantum Emitters in 2D Semiconductors

HL 16.7: Talk

Tuesday, March 10, 2026, 12:30–12:45, POT/0081

Ion-beam induced quantum emitters in hexagonal boron nitride — •Jan Böhmer, Annkathrin Köhler, Hannes Simon, Lucas Böhme, and Carsten Ronning — Friedrich Schiller University, Jena, Germany

Defect centers in solid-state materials are emerging as highly promising candidates for realizing robust quantum light sources. Among these, hexagonal boron nitride (hBN) has attracted significant interest due to its potential for hosting room-temperature single photon emitters (SPEs). We utilize ion-beam irradiation to introduce optically active defect centers into hBN, offering a controlled and tunable method for engineering defect centers. We have investigated intrinsic and extrinsic ion-beam induced defect centers in exfoliated hBN flakes: Micro-photoluminescence spectroscopy (µ-PL) was employed to characterize the spectral properties of the induced emitters, while second-order correlation measurements (g⁽²⁾) were performed to demonstrate the single-photon emission behavior and determine the quantum nature of the sources. Additionally, in-situ electrical measurements were used to monitor the reaction of the hBN flakes to irradiation in real-time. The results demonstrate that ion-beam irradiation can be successfully utilized for creation of quantum emitters in hBN. This work contributes to the ongoing effort to develop reliable, solid-state single photon emitters for quantum applications.

Keywords: quantum emitters; single photon emitters; ion-beam; hexagonal boron nitride; ion irradiation