Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.10: Poster

Tuesday, March 10, 2026, 18:00–20:00, P1

Transport measurements in thin layers of HfTe₅ — •Freddy Sack¹, Christopher Belke¹, Sonja Locmelis², Lina Bockhorn¹, and Rolf J. Haug¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — ²Institut für Anorganische Chemie, Leibniz Universität, 30167 Hannover, Germany

Hafnium pentatelluride (HfTe₅) gained interest due to its topological insulator behavior and the pronounced anisotropy arising from highly disparate electron and hole masses. In recent works, a thickness dependent band gap was observed [1]. In contrast to the small band gap found in bulk HfTe₅, single layers are predicted to be quantum spin hall insulator with a large band gap [1-4]. In this study, we investigate temperature dependent transport properties of thin layers of HfTe₅ from 5 K to 270 K. Gate dependent measurements for different magnetic fields are utilized to characterize thin flakes with a thickness less than 50 nm and to investigate the resistance anomaly.

[1] C. Belke et al., 2D Mater. 8, 0350292021 (2021)

[2] K.C Dogan et al., Nanoscale, 16, 11262 (2024)

[3] Ling-Xioa Zhao et al., Chinese Phys. Lett. 34 037102 (2017)

[4] Bo Fu et al., Phys. Rev. Lett. 125, 258801 (2020)

Keywords: Transition Metal Pentachalcogenides; Electrical Transport; Temperature Dependance; Resistance Anomaly