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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.33: Poster

Dienstag, 10. März 2026, 18:00–20:00, P1

Laser induced oxidation of thin layered MoS2 — •Aniketa Anampally, Gerhard Berth, Klaus Jöns, and Henry Hübschmann — Paderborn University, Germany

Transition metal dichalcogenides (TMDs) have gained great attention within the growing field of 2D materials. Due to their inherent semiconductor properties, materials like molybdenum disulfide (MoS2) have been implemented in many components of photonic and optoelectronic devices [1,2]. Precise structural modification has been proven to exhibit significant benefits to build tailored devices on the nanoscale [3]. In this work nonlinear microscopy is utilized for in-situ probing and laser oxidation of mechanically exfoliated 2H-MoS2. Precise locally resolved oxidation has been performed by second harmonic microscopy. The arising layer number dependency of this treatment is investigated further supported by polarization resolved analysis.

Keywords: 2D materials; transition metal dichalcogenide; laser oxidized MoS2; SHG microscopy