Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.39: Poster
Tuesday, March 10, 2026, 18:00–20:00, P1
Auger-recombination in no-wetting layer InAs self-assembled quantum dots — •M. Rasulyar1, H. Mannel1, F. Rimek1, A. Ludwig2, A. Lorke1, and M. Geller1 — 1Faculty of Physics and CENIDE, University of Duisburg-Essen, 47057 Duisburg, Germany — 2Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany
The Auger-Meitner effect is a non-radiative recombination pathway in which the energy of an electron-hole pair is transferred to a third carrier. In colloidal quantum dots, this mechanism is known to suppress radiative emission, while in self-assembled InAs/GaAs quantum dots, both non-radiative Auger processes [1] and radiative Auger-like channels [2] have been reported. However, as Auger recombination is a dephasing effect in quantum dot-based single-photon devices, we study the influence of the confining potential on the non-radiative Auger recombination rate.
We investigate the Auger-Meitner dynamics in a no-wetting layer quantum dot incorporated in a gate-tunable p-i-n diode. Under resonant excitation of the trion transition, we observe a pronounced quenching of the resonance-fluorescence signal. The intensity reduction is quantitatively explained by the competition between the electron emission rate and the electron tunneling-in rate. The Auger recombination rate is in the order of 1 µ s−1 and in accordance with previous measurements with a rate of γa=2.3 µ s−1 [1]. [1]A. Kurzmann et al., Nano Lett. 16, 3367 (2016). [2]M. Löbl et al., Nat. Nanotechnol. 15, 558-562 (2020). [3]M. Löbl et al., Commun. Phys. 2, 93 (2019).
Keywords: Quantum Dot; Self-Assembled; auger; no wetting layer; Resonance fluorescence