Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.45: Poster
Tuesday, March 10, 2026, 18:00–20:00, P1
Ohmic contact for charge tuning devices — •Krupali Dobariya1, Tom Fandrich1, Yiteng Zhang1, Arijit Chakraborty1, Sulabh Shrestha1, Doaa Abdelbarey1, Eddy P. Rugeramigabo1, Michael Zopf1,2, and Fei Ding1,2 — 1Leibniz Universität Hannover Institut für Festkörperphysik, Appelstraße 2, 30167 Hannover, Germany. — 2Leibniz Universität Hannover Laboratorium für Nano- und Quantenengineering, Schneiderberg 39, 30167 Hannover, Germany.
Semiconductor quantum dots have shown unique properties as deterministic single photon and entangled photon pair sources. Their outstanding optical properties have the potential for use in quantum applications like quantum communication, quantum key distribution and quantum computing. Nevertheless, due to the stochastic nature of the self-assembly growth process, quantum dots typically emit photons with a broad wavelength distribution across the entire chip, posing challenges for applications requiring specific wavelengths. To address this issue, various tuning techniques have been developed. Electrical tuning, in particular, has emerged as an effective method for adjusting the wavelength and mitigating charge noise in semiconductor quantum dots. Here we study the impact of contact fabrication on the emission properties of GaAs quantum dots. We aim to optimize the process of forming ohmic contacts to n- and p-doped GaAs, placing special emphasis on the selection of materials and the reduction of contact resistance. The quality and performance of the electrical contacts are evaluated through the photoluminescence characterization.
Keywords: Ohmic contact; Charge tuning; Semicondoctor quantum dots; Metal contact; Stark tuning