Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.4: Poster

Tuesday, March 10, 2026, 18:00–20:00, P1

Far- and near-field photoluminescence of interlayer excitons in MoS2/WS2 heterostructures — •Johannes Holters and Iris Niehues — Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster

Monolayers of transition-metal dichalcogenides show intense photoluminescence (PL) at room temperature due to their high exciton binding energies. Recently, heterostructures composed of two vertically stacked monolayers have gained significant attention because of the emergence of novel quantum phenomena within these materials. Of particular interest are interlayer excitons, where, in contrast to intralayer excitons, electron and hole reside in different layers of the heterostructure. Strain, nanobubbles, Moiré effects and other local inhomogeneities can localize the appearance of these interlayer excitons to several nanometer. Here we use a scattering-type scanning near-field microscope (s-SNOM) to investigate the photoluminescence (PL) of interlayer excitons in a MoS2/WS2 heterostructure with a spatial resolution below the diffraction limit. The obtained tip-enhanced PL (TEPL) images are compared to standard confocal microscopy images. Both intra- and interlayer excitons are visible in far- and near-field images. In the TEPL images an enhanced PL signal is observed in the form of arcs around nanobubbles. These features can be assigned to interference effects caused by the interaction of the far-field light with the tip. Additionally, it is found that the intensity of the interlayer exciton PL strongly depends on the polarization of the exciting laser as well as the distance between tip and sample in the TEPL setup.

Keywords: tip-enhanced photoluminescence; interlayer excitons; s-SNOM; transition-metal dichalcogenides; heterostructures