Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.56: Poster
Tuesday, March 10, 2026, 18:00–20:00, P1
Top-Down Fabrication and characterization of Al-Si-Al Nanowire Schottky barrier field-effect transistors — •Banafsheh Aghvami1, Alessandro Puddu1,2, Ahmed Elwakeel1,2, Sayantan Ghosh1, Ahmad Echresh1, and Artur Erbe1,2 — 1Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden, 01328, Germany — 2Technische Universität Dresden, Dresden, 01069, Germany
In Schottky barrier field-effect transistors (SBFETs), the channel length plays a crucial role in device performance. Shorter channels lead to lower channel resistance, stronger electrostatic gate control, reduced threshold voltage, and improved ON/OFF current ratios. However, to achieve sub-100 nm channel lengths using conventional top-down patterning approaches is extremely challenging due to resolution limits, line-edge roughness, and probable alignment errors. In contrast, the Al-Si-Al solid-state exchange process via rapid thermal annealing (RTA) enables the formation of well-defined and self-aligned short silicon channels. In this study, electron beam lithography (EBL) is used to define nanowire structures into HSQ resist. Then, the patterned structures will be transfered into the silicon layer by Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE). The Aluminium metal contacts will be formed by sputtering deposition. Scanning Electron Microscopy (SEM) will be employed to analyse the Al-Si-Al heterostructure. In addition, the performance of fabricated SBFETs will be evaluated by electrical characterisation using back-gated configuration.
Keywords: Schottky barrier; Field-effect transistor; Al-Si exchange; Top-down fabrication