Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.66: Poster

Tuesday, March 10, 2026, 18:00–20:00, P1

Oxygen Vacancy-Mediated Non-Volatile Memory in RF-Sputtered Ga₂O₃ films — •Aman Baunthiyal, Jon-Olaf Krisponeit, Marco Schowalter, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, and Jens Falta — Institute of Solid State Physics, University of Bremen, Bremen, Germany

To address the memory bottleneck in conventional electronics, resistive switching (RS) has emerged as a promising route for next-generation memory technologies. Among various materials used in RS devices, β-Ga₂O₃ offers advantages such as high breakdown strength and defect-mediated conductivity. However, its direct growth on metal electrodes with controlled microstructure, crucial for scalable vertical devices, remains largely unexplored. Here, we investigate RF-sputtered Ga₂O₃ deposited on smooth Ru(0001) films for non-volatile RS applications.

XRD and TEM confirm the temperature-dependent structural evolution of Ga₂O₃ and its correlation with the I–V response. Devices grown at intermediate temperatures (∼400^∘C) show the best switching window (up to 10⁴), with thinner films enabling low set voltages (∼1.5 V) [1] but poorer stability. In contrast, thicker layers require higher voltages (∼4 V) yet offer better reliability [2]. This behaviour arises from temperature-driven grain growth and the γ→β phase transition [3], which creates mixed phases and grain boundaries that govern oxygen-vacancy-mediated filament dynamics.

[1] A. Baunthiyal et al., Appl. Phys. Lett. 123, 213504 (2023). [2] A. Baunthiyal et al., 2023 IEEE NMDC, pp. 536-540. [3] A. Baunthiyal et al., APL Mater. 13, 041130 (2025).

Keywords: Ga2O3; Ru(0001); Resistive Switching; ReRAM; Oxygen vacancies